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Device- and Process Characterization

SPICE - Modelling

Measurement of 1/f-noise on bipolar- and MOS-transistors and determination of the noise parameters for simulation models

Picture : 1/f-Noise of an bipolar transistor

The picture shows the noise current of an BC549B measured on the base with an source-resistor of 47k at Ic=(0.75, 1.5, 3, 6 ,12)mA. The noise voltage on the collector is measured with an spectrum analyzer in three frequency-cuts. Preceded calibration measurements are protecting the relation of the measurements to the input current. The noise current will be calculated with the source-resistance Rs. The spice parameters AF and KF will be extracted by an fit-program. The measurement setup (mainly with Rc and Rs) and the operating point of the transistor (Ic) must be considered in the spice simulation. The line shows the simulation results with the gummel-poon-model and the extracted parameters AF and KF, the dotted line shows the measurement results (in the picture).

Offer for 1/f-noise:

• Measurement of the spectral noise density (Inoise, Enoise - on discrete devices ore on wafers):
  • MOS-transistors
  • Bipolar-transistors
  • Diodes
  • Amplifiers
• Extraction of the noise parameter for different noise models in various simulators
• Extraction of the noise figure NF