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Device- and Process Characterization

SPICE - Modelling

Measurement of the transition frequency Ft on bipolar- and MOS-transistors and determination of the parameters for simulation models

Picture : Transition frequency Ft of an bipolar transistor (measured on the wafer)

The figure depicts the transition frequency of an bipolar transistor at different working conditions. At first, measurements of the S-parameters are done with a network analyser. The transition frequency's are calculated from the calculated h-parameters. The line shows the simulation results with the gummel-poon-model and the extracted parameters, the dotted line shows the measurement results (after calculation of Ft) .

Offer for transition frequency Ft:

• Measurement of the S-parameters, calculation of the h-parameters and of the transition frequency on discrete devices ore on wafers:
  • MOS-transistors
  • Bipolar-transistors
  • Diodes
  • Amplifiers
• Extraction of the model parameters for different models in various simulators