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Analysis, Reliability, Climat, Test

OBIC Approach

Optical-Electronically Special Microscopy

The use of the Laser scan - Microscope LSM 21 IR allows beside the normal optical inspection with resolutions into the sub-micron range also special examinations of semiconductor materials and -devices. Particular advantageous of this analysis method is the missing of destruction, we don't need vacuum and passivation layers don't disturb.

1. OBIC (Optical Beam Induced Current)
   • Leakage Current Analysis
   • Latch-Up effect on CMOS structures
   • Distance and justify failure in implanted structures
   • Diffusion length on PN-Junctions
   • Sensitivity analysis of IC parameters (bias, temperature, switching level)
   • Logical functional analysis on CMOS circuits
   • Soft error test on memory devices (stimulation of errors)
   • Test of power devices
   • Infrared OBIC on laser- and photo diodes
2. Infrared Scan Microscope (IR 1152nm)
   • Defects in metallization
   • Contamination, corrosion, electro migration, influence of mechanical stress
   • Back side - examination of semiconductor chips and -wafer
   • Depth inspection of covering layers - optical separation with 3D visualization

The two left pictures are showing the optical representation with HeNe Laser Scanning (633nm) on two different silicon technologies (Bipolar and NMOS). The result of a wrong color graphing shows parts of two input protection circuits on a CMOS-Chip (1.5um), the upper diode in this example has a biasing.

With a double click you can see all this pictures in a better quality!